A novel coaxial-structured amorphous-silicon p-i-n solar cell with Al-doped ZnO nanowires

Hung Hsien Li*, Po Yu Yang, Si Ming Chiou, Han Wen Liu, Huang-Chung Cheng

*Corresponding author for this work

Research output: Contribution to journalArticle

18 Scopus citations

Abstract

A novel coaxial-structured amorphous-silicon (a-Si) p-i-n solar cell with 1- μm-long low-temperature hydrothermally synthesized Al-doped-ZnO (AZO) nanowires was demonstrated for the first time. The conversion efficiency η increased from 3.92% to 4.27% when the intrinsic a-Si thickness was increased from 25 to 150 nm and then decreased to 3.66% when the intrinsic layer thickness was further increased to 250 nm. It was attributed to an excessively thick intrinsic a-Si layer that would decrease the internal electrical field and interfere with charge separation. With the optimum intrinsic a-Si thickness of 150 nm, the conversion efficiency increased from 4.27% to 4.73% when the AZO wire length was increased from 1 to 2 μm. Moreover, the proposed coaxial-structured solar cell exhibited a nearly 46% efficiency enhancement over a conventional a-Si thin-film solar cell.

Original languageEnglish
Article number5768064
Pages (from-to)928-930
Number of pages3
JournalIEEE Electron Device Letters
Volume32
Issue number7
DOIs
StatePublished - 1 Jul 2011

Keywords

  • Al-doped-ZnO (AZO) nanowires
  • amorphous silicon (a-Si)
  • coaxial structure
  • solar cell

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