A Novel Camel Diode Gate GaAs FET

W. Kopp, T. J. Drummond, Ta-Hui Wang, H. Morkoç, S. L. Su

Research output: Contribution to journalArticle

Abstract

A novel device utilizing the “camel diode” in place of a Schottky barrier gate has been demonstrated in GaAs grown by molecular beam epitaxy (MBE). The devices have a 7.5 μm channel length, 3 μm gate length, and a 280 gate width. The layers from which the devices are fabricated consist of a 0.15 μm GaAs layer doped to a level of 1.5 × 1017 cm-3 to form the channel, and a 100 Å p + GaAs and a 400 Å n + region to form the gate. Because of the long gate length, the electron velocity does not reach saturation, thus a transconductance of 80 mS/mm is obtained. A simple theory describing the device operation has also been developed.

Original languageEnglish
Pages (from-to)86-88
Number of pages3
JournalIEEE Electron Device Letters
Volume3
Issue number4
DOIs
StatePublished - 1 Jan 1982

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    Kopp, W., Drummond, T. J., Wang, T-H., Morkoç, H., & Su, S. L. (1982). A Novel Camel Diode Gate GaAs FET. IEEE Electron Device Letters, 3(4), 86-88. https://doi.org/10.1109/EDL.1982.25489