A novel bottom-up Ag contact (30nm diameter and 6.5 aspect ratio) technology by electroplating for 1Xnm and beyond technology

Chao An Jong*, Po Jung Sung, Mei Yi Lee, Fu Ju Hou, Kehuey Wu, Ying Hao Su, Bing Mau Chen, Chia Wei Ho, Ren Jei Chung, Yao Jen Lee, Wen Fa Wu, Chen-Ming Hu, Fu Liang Yang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Very high 6.5 aspect ratio, 30nm diameter contacts are filled with a novel bottom-up Ag electroplating technology for the first time. The technology utilizes two distinct advantages of Ag over Cu: (1) Ag has the lower metal resistivity, and (2) Ag has several orders of magnitude lower diffusivity in Si than Cu. The bottom-up deposition technology intrinsically avoids the issue of seam formation arising from sidewall deposition, and thus is very promising" for future scaled contacts, even down to single digit nano-meter technology nodes.

Original languageEnglish
Title of host publication2011 International Electron Devices Meeting, IEDM 2011
DOIs
StatePublished - 1 Dec 2011
Event2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, DC, United States
Duration: 5 Dec 20117 Dec 2011

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Conference

Conference2011 IEEE International Electron Devices Meeting, IEDM 2011
CountryUnited States
CityWashington, DC
Period5/12/117/12/11

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