Very high 6.5 aspect ratio, 30nm diameter contacts are filled with a novel bottom-up Ag electroplating technology for the first time. The technology utilizes two distinct advantages of Ag over Cu: (1) Ag has the lower metal resistivity, and (2) Ag has several orders of magnitude lower diffusivity in Si than Cu. The bottom-up deposition technology intrinsically avoids the issue of seam formation arising from sidewall deposition, and thus is very promising" for future scaled contacts, even down to single digit nano-meter technology nodes.
|Title of host publication||2011 International Electron Devices Meeting, IEDM 2011|
|State||Published - 1 Dec 2011|
|Event||2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, DC, United States|
Duration: 5 Dec 2011 → 7 Dec 2011
|Name||Technical Digest - International Electron Devices Meeting, IEDM|
|Conference||2011 IEEE International Electron Devices Meeting, IEDM 2011|
|Period||5/12/11 → 7/12/11|