A novel approach to compact model parameter extraction for excimer laser annealed complementary thin film transistors

Yi-Ming Li*, Shao Ming Yu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

A unified physical-based model parameter extraction technique for excimer laser annealed lower temperature polycrystalline silicon (LTPS) complementary thin film transistors (TFTs) is for the first time proposed. For two well-known compact models of LTPS TFT, Rensselaer Polytechnic Institute (RPI) V1 and V2 models, our approach sequentially optimizes the model parameters in the regions of linear, subthreshold, saturation, and leakage. Compared with the measured results, the extracted ID - VG, ID - VD, transconductance, and output conductance are within 3% of accuracy. The agreement with the experimental data is excellent for the n- and p-type LTPS TFTs with different length and width. This extraction technique bridges the fabrication of LTPS TFTs and the design of complementary system on panel circuits.

Original languageEnglish
Pages (from-to)257-261
Number of pages5
JournalJournal of Computational Electronics
Volume3
Issue number3-4
DOIs
StatePublished - Oct 2004

Keywords

  • Compact model
  • LTPS TFT
  • Optimization
  • Parameter extraction technique
  • RPI V1 and V2 models

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