A Novel Approach of Fabricating Germanium Nanocrystals for Nonvolatile Memory Application

T. C. Chang*, S. T. Yan, Po-Tsun Liu, C. W. Chen, S. H. Lin, S. M. Sze

*Corresponding author for this work

Research output: Contribution to journalArticle

48 Scopus citations

Abstract

A nonvolatile memory device embedded with Ge nanocrystal dots is fabricated by the thermal oxidation of Si0.8Ge0.2 combined with a rapid thermal annealing at 950°C in N2 gas. The tunnel oxide in the nonvolatile memory is controlled to be 4.5 nm thick and embedded with 5.5 nm Ge nanocrystals. A low operating voltage, 5 V, is implemented and a significant threshold-voltage shift, 0.42 V, is observed. When the electrons are trapped in the Ge nanocrystals, the effect of Coulomb blockade prevents the injection and storage of more electrons and decreases the leakage current. Also, the retention characteristics are tested to be robust.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume7
Issue number1
DOIs
StatePublished - 9 Feb 2004

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