A Novel Approach for Parameter Extraction and Characteristics Simulation of Deep-Submicron MOSFET's with a Genetic Algorithm

Yi-Ming Li*, Yen Yu Cho

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, we apply a novel genetic algorithm (GA) in parameter extraction and characteristic optimization for deep-submicron Metal-Oxide-Semiconductor Fiend Effect Transistors (MOSFETs). For a specified equivalent BSIM model of MOSFET, the proposed solution technique is based on the monotone iterative method and the genetic algorithm with floating-point operators. First, a set of nonlinear equations is solved with the MI method, and the result obtained is optimized with the GA method. The iteration of characterization process is stopped when a global self-consistent solution is obtained. This simulation methodology has been successfully implemented with a window-based interactive environment. It provides a user-friendly interface for practical engineering applications. Compared with measured data, our result shows good accuracy for different dimensional MOSFETs. For all simulations, this method has robust convergent property and computational efficiency. This characterization technique can also apply to advanced nanoscale devices.

Original languageEnglish
Title of host publication21st IASTED International Multi-Conference on Applied Informatics
Pages103-108
Number of pages6
StatePublished - Jan 2003
Event21st IASTED International Multi-Conference on Applied Informatics - Innsbruck, Austria
Duration: 10 Feb 200313 Feb 2003

Publication series

NameIASTED International Multi-Conference on Applied Informatics
Volume21

Conference

Conference21st IASTED International Multi-Conference on Applied Informatics
CountryAustria
CityInnsbruck
Period10/02/0313/02/03

Keywords

  • Characteristics simulation
  • Deep-submicron MOSFET
  • Genetic algorithm
  • Monotone iterative
  • Parameter extraction

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  • Cite this

    Li, Y-M., & Cho, Y. Y. (2003). A Novel Approach for Parameter Extraction and Characteristics Simulation of Deep-Submicron MOSFET's with a Genetic Algorithm. In 21st IASTED International Multi-Conference on Applied Informatics (pp. 103-108). (IASTED International Multi-Conference on Applied Informatics; Vol. 21).