A normally-off AlGaN/GaN transistor with RonA=2.6mΩcm 2 and BVds=640V using conductivity modulation

Yasuhiro Uemoto*, Masahiro Hikita, Hiroaki Ueno, Hisayoshi Matsuo, Hidetoshi Ishida, Manabu Yanagihara, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

37 Scopus citations

Abstract

We report a normally-off GaN-based transistor using conductivity modulation, which we call GIT (Gate Injection Transistor). This new device principle utilizes hole-injection from p-AlGaN to AlGaN/GaN heterojunction, which increases electron density in the depleted channel resulting in dramatic increase of the drain current owing to the conductivity modulation. The fabricated GIT exhibits the threshold voltage of 1.0V with high maximum drain current of 200mA/mm. The obtained on-state resistance (Ron·A) and off-state breakdown voltage (BVds) are 2.6mΩ·cm 2 and 640V, respectively. These values are the best ones ever reported for GaN-based normally-off transistors.

Original languageEnglish
Title of host publication2006 International Electron Devices Meeting Technical Digest, IEDM
DOIs
StatePublished - 1 Dec 2006
Event2006 International Electron Devices Meeting, IEDM - San Francisco, CA, United States
Duration: 10 Dec 200613 Dec 2006

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Conference

Conference2006 International Electron Devices Meeting, IEDM
CountryUnited States
CitySan Francisco, CA
Period10/12/0613/12/06

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