We report an amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor nonvolatile memory (NVM). This NVM shows a large 1.2-V extrapolated ten-year memory window, along with low 10-V/-12-V program/erase voltage, fast 1-ms/100-μs speed, and good endurance. This was achieved using a charge-trap-engineered structure and high-κlayers.
- Charge-trapping-engineered Flash (CTEF)
- Metal-oxide-nitride-oxide-semiconductor (MONOS)
- Nonvolatile memory (NVM)