A nonvolatile InGaZnO charge-trapping-engineered flash memory with good retention characteristics

Nai Chao Su*, Shui Jinn Wang, Albert Chin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

32 Scopus citations

Abstract

We report an amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor nonvolatile memory (NVM). This NVM shows a large 1.2-V extrapolated ten-year memory window, along with low 10-V/-12-V program/erase voltage, fast 1-ms/100-μs speed, and good endurance. This was achieved using a charge-trap-engineered structure and high-κlayers.

Original languageEnglish
Article number5378649
Pages (from-to)201-203
Number of pages3
JournalIEEE Electron Device Letters
Volume31
Issue number3
DOIs
StatePublished - 1 Mar 2010

Keywords

  • Charge-trapping-engineered Flash (CTEF)
  • High-ê
  • InGaZnO
  • Metal-oxide-nitride-oxide-semiconductor (MONOS)
  • Nonvolatile memory (NVM)

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