A non-charge-sheet based analytical model of undoped symmetric double-gate MOSFETs using SPP approach

Jin He*, Xuemei Xi, Mansun Chan, Chung Hsun Lin, Ali Niknejad, Chen-Ming Hu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

28 Scopus citations

Abstract

A non-charge-sheet based analytical model of undoped symmetric double-gate MOSFETs is developed in this paper using the SPP approach. The essential difference of the present theory compared with the previous lies in that the Poisson equation is solved in the term of the electron concentration rather than the term of the surface potential. This solution formulates electrical field, surface potential in inversion charge term rather than the surface potential. Thus, a non-charge-sheet-based analytical solution of inversion charge is obtained directly replacing solution of transcendent equation groups of the surface potential. The obtained inversion charge relation then serves to develop a non-charge-sheet-based analytical theory for undoped symmetric double-gate MOSFETs from Pao-Sah current formulation. The formulated model has an analytic form that does not need to solve for the transcendent equation as in the conventional surface potentials or Pao-Sah formulation. The validity of the model has also been demonstrated by extensive comparison with AMD double-gate MOSFETs data.

Original languageEnglish
Title of host publicationProceedings - 5th International Symposium on Quality Electronic Design, ISQUED 2004
PublisherIEEE Computer Society
Pages45-50
Number of pages6
ISBN (Print)0769520936, 9780769520933
DOIs
StatePublished - 1 Jan 2004
EventProceedings - 5th International Symposium on Quality Electronic Design, ISQED 2004 - San Jose, CA, United States
Duration: 22 Mar 200424 Mar 2004

Publication series

NameProceedings - 5th International Symposium on Quality Electronic Design, ISQUED 2004

Conference

ConferenceProceedings - 5th International Symposium on Quality Electronic Design, ISQED 2004
CountryUnited States
CitySan Jose, CA
Period22/03/0424/03/04

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