A non-charge-sheet analytic theory for undoped symmetric double-gate MOSFETs from the exact solution of Poisson's equation using SPP approach

Jin He*, Xuemei Xi, Chung-Hsun Lin Chung-Hsun, Mansun Chan, Ali Niknejad, Chen-Ming Hu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

24 Scopus citations

Abstract

A non-charge-sheet based analytic theory for undoped symmetric double-gate MOSFETs is presented in this paper. The formulation is based on the exact solution of the Poisson's equation to solve for electron concentration directly rather than relying on the surface potential alone. Therefore, carrier distribution in the channel away from the surface is also taken care, giving a non-charge-sheet model compatible with the classical Pao-Sah model. The formulated model has an analytic form that does not need to solve for the transcendent equation as in the conventional surface potentials or Pao-Sah formulation. The validity of the model has also been demonstrated by extensive comparison with AMD double-gate MOSFET's data.

Original languageEnglish
Title of host publication2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004
EditorsM. Laudon, B. Romanowicz
Pages124-127
Number of pages4
StatePublished - 2 Nov 2004
Event2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004 - Boston, MA, United States
Duration: 7 Mar 200411 Mar 2004

Publication series

Name2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004
Volume2

Conference

Conference2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004
CountryUnited States
CityBoston, MA
Period7/03/0411/03/04

Keywords

  • Compact modeling
  • Double-gate
  • MOSFETs

Fingerprint Dive into the research topics of 'A non-charge-sheet analytic theory for undoped symmetric double-gate MOSFETs from the exact solution of Poisson's equation using SPP approach'. Together they form a unique fingerprint.

Cite this