@inproceedings{a41496c136b74b9caf1ce118c39ffd98,

title = "A non-charge-sheet analytic theory for undoped symmetric double-gate MOSFETs from the exact solution of Poisson's equation using SPP approach",

abstract = "A non-charge-sheet based analytic theory for undoped symmetric double-gate MOSFETs is presented in this paper. The formulation is based on the exact solution of the Poisson's equation to solve for electron concentration directly rather than relying on the surface potential alone. Therefore, carrier distribution in the channel away from the surface is also taken care, giving a non-charge-sheet model compatible with the classical Pao-Sah model. The formulated model has an analytic form that does not need to solve for the transcendent equation as in the conventional surface potentials or Pao-Sah formulation. The validity of the model has also been demonstrated by extensive comparison with AMD double-gate MOSFET's data.",

keywords = "Compact modeling, Double-gate, MOSFETs",

author = "Jin He and Xuemei Xi and {Lin Chung-Hsun}, Chung-Hsun and Mansun Chan and Ali Niknejad and Chen-Ming Hu",

year = "2004",

month = nov,

day = "2",

language = "English",

isbn = "0972842276",

series = "2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004",

pages = "124--127",

editor = "M. Laudon and B. Romanowicz",

booktitle = "2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004",

note = "null ; Conference date: 07-03-2004 Through 11-03-2004",

}