A NiSi salicide technology for advanced logic devices

T. Morimoto; H. S. Momose; T. Iinuma; I. Kunishima; K. Suguro; H. Okana; I. Katakabe; H. Nakajima; M. Tsuchiaki; M. Ono; Y. Katsumata; H. Iwai

doi:10.1109/IEDM.1991.235387

A NiSi salicide technology for advanced logic devices

T. Morimoto, H. S. Momose, T. Iinuma, I. Kunishima, K. Suguro, H. Okana, I. Katakabe, H. Nakajima, M. Tsuchiaki, M. Ono, Y. Katsumata, H. Iwai

International College of Semiconductor Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

65 Scopus citations

Abstract

A nickel-silicide (NiSi) technology for deep submicron devices has been developed. It was confirmed that Ni films sputtered on n- and p-single and polysilicon can be changed to mono-silicide (NiSi) stably at low temperature (600 degrees C) over a short period without any agglomeration. The NiSi layer did not absorb boron or arsenic atoms during silicidation, and a high concentration of boron or arsenic was achieved at the silicide/silicon interface, contributing to a low contact resistance. NiSi technology was applied to a dual-gate CMOS structure. Excellent pn junction characteristics and high drivabilities of both the n- and p-MOSFETs were successfully obtained.

Original language	English
Title of host publication	International Electron Devices Meeting 1991, IEDM 1991
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	653-656
Number of pages	4
ISBN (Electronic)	0780302435
DOIs	https://doi.org/10.1109/IEDM.1991.235387
State	Published - 1991
Event	International Electron Devices Meeting, IEDM 1991 - Washington, United States Duration: 8 Dec 1991 → 11 Dec 1991

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	1991-January
ISSN (Print)	0163-1918

Conference

Conference	International Electron Devices Meeting, IEDM 1991
Country	United States
City	Washington
Period	8/12/91 → 11/12/91

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10.1109/IEDM.1991.235387

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Morimoto, T., Momose, H. S., Iinuma, T., Kunishima, I., Suguro, K., Okana, H., Katakabe, I., Nakajima, H., Tsuchiaki, M., Ono, M., Katsumata, Y., & Iwai, H. (1991). A NiSi salicide technology for advanced logic devices. In International Electron Devices Meeting 1991, IEDM 1991 (pp. 653-656). [235387] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 1991-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.1991.235387

Morimoto, T. ; Momose, H. S. ; Iinuma, T. ; Kunishima, I. ; Suguro, K. ; Okana, H. ; Katakabe, I. ; Nakajima, H. ; Tsuchiaki, M. ; Ono, M. ; Katsumata, Y. ; Iwai, H. / A NiSi salicide technology for advanced logic devices. International Electron Devices Meeting 1991, IEDM 1991. Institute of Electrical and Electronics Engineers Inc., 1991. pp. 653-656 (Technical Digest - International Electron Devices Meeting, IEDM).

@inproceedings{1a0537308c73493bb6df0cbed46235e8,

title = "A NiSi salicide technology for advanced logic devices",

abstract = "A nickel-silicide (NiSi) technology for deep submicron devices has been developed. It was confirmed that Ni films sputtered on n- and p-single and polysilicon can be changed to mono-silicide (NiSi) stably at low temperature (600 degrees C) over a short period without any agglomeration. The NiSi layer did not absorb boron or arsenic atoms during silicidation, and a high concentration of boron or arsenic was achieved at the silicide/silicon interface, contributing to a low contact resistance. NiSi technology was applied to a dual-gate CMOS structure. Excellent pn junction characteristics and high drivabilities of both the n- and p-MOSFETs were successfully obtained.",

author = "T. Morimoto and Momose, {H. S.} and T. Iinuma and I. Kunishima and K. Suguro and H. Okana and I. Katakabe and H. Nakajima and M. Tsuchiaki and M. Ono and Y. Katsumata and H. Iwai",

year = "1991",

doi = "10.1109/IEDM.1991.235387",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "653--656",

booktitle = "International Electron Devices Meeting 1991, IEDM 1991",

address = "United States",

note = "null ; Conference date: 08-12-1991 Through 11-12-1991",

}

Morimoto, T, Momose, HS, Iinuma, T, Kunishima, I, Suguro, K, Okana, H, Katakabe, I, Nakajima, H, Tsuchiaki, M, Ono, M, Katsumata, Y & Iwai, H 1991, A NiSi salicide technology for advanced logic devices. in International Electron Devices Meeting 1991, IEDM 1991., 235387, Technical Digest - International Electron Devices Meeting, IEDM, vol. 1991-January, Institute of Electrical and Electronics Engineers Inc., pp. 653-656, International Electron Devices Meeting, IEDM 1991, Washington, United States, 8/12/91. https://doi.org/10.1109/IEDM.1991.235387

A NiSi salicide technology for advanced logic devices. / Morimoto, T.; Momose, H. S.; Iinuma, T.; Kunishima, I.; Suguro, K.; Okana, H.; Katakabe, I.; Nakajima, H.; Tsuchiaki, M.; Ono, M.; Katsumata, Y.; Iwai, H.

International Electron Devices Meeting 1991, IEDM 1991. Institute of Electrical and Electronics Engineers Inc., 1991. p. 653-656 235387 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 1991-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Momose, H. S.

AU - Iinuma, T.

AU - Kunishima, I.

AU - Suguro, K.

AU - Okana, H.

AU - Katakabe, I.

AU - Nakajima, H.

AU - Tsuchiaki, M.

AU - Ono, M.

AU - Katsumata, Y.

AU - Iwai, H.

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N2 - A nickel-silicide (NiSi) technology for deep submicron devices has been developed. It was confirmed that Ni films sputtered on n- and p-single and polysilicon can be changed to mono-silicide (NiSi) stably at low temperature (600 degrees C) over a short period without any agglomeration. The NiSi layer did not absorb boron or arsenic atoms during silicidation, and a high concentration of boron or arsenic was achieved at the silicide/silicon interface, contributing to a low contact resistance. NiSi technology was applied to a dual-gate CMOS structure. Excellent pn junction characteristics and high drivabilities of both the n- and p-MOSFETs were successfully obtained.

AB - A nickel-silicide (NiSi) technology for deep submicron devices has been developed. It was confirmed that Ni films sputtered on n- and p-single and polysilicon can be changed to mono-silicide (NiSi) stably at low temperature (600 degrees C) over a short period without any agglomeration. The NiSi layer did not absorb boron or arsenic atoms during silicidation, and a high concentration of boron or arsenic was achieved at the silicide/silicon interface, contributing to a low contact resistance. NiSi technology was applied to a dual-gate CMOS structure. Excellent pn junction characteristics and high drivabilities of both the n- and p-MOSFETs were successfully obtained.

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BT - International Electron Devices Meeting 1991, IEDM 1991

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Morimoto T, Momose HS, Iinuma T, Kunishima I, Suguro K, Okana H et al. A NiSi salicide technology for advanced logic devices. In International Electron Devices Meeting 1991, IEDM 1991. Institute of Electrical and Electronics Engineers Inc. 1991. p. 653-656. 235387. (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.1991.235387

A NiSi salicide technology for advanced logic devices

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