A nickel-silicide (NiSi) technology for deep submicron devices has been developed. It was confirmed that Ni films sputtered on n- and p-single and polysilicon can be changed to mono-silicide (NiSi) stably at low temperature (600 degrees C) over a short period without any agglomeration. The NiSi layer did not absorb boron or arsenic atoms during silicidation, and a high concentration of boron or arsenic was achieved at the silicide/silicon interface, contributing to a low contact resistance. NiSi technology was applied to a dual-gate CMOS structure. Excellent pn junction characteristics and high drivabilities of both the n- and p-MOSFETs were successfully obtained.