A New Vertical Power MOSFET Structure with Extremely Reduced On-Resistance

Daisuke Ueda, Hironiitsu Takagi, Gota Kano

Research output: Contribution to journalArticlepeer-review

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A new vertical power MOSFET structure called rectangular-grooved MOSFET (RMOS) is proposed, in which the vertical channels are provided along the sidewalls of the rectangular grooves formed by a reactive ion-beam etching (RIBE) technique. The structure is characterized by reduced ON -resistance and high packing density. The tionship between the ON-resistance and the packing density in the new structure is calculated. It is demonstrated that the structure essentially possesses a lower ON -resistance per unit area than VMOS and CMOS structures. Experimental results are also described in detail.

Original languageEnglish
Pages (from-to)2-6
Number of pages5
JournalIEEE Transactions on Electron Devices
Issue number1
StatePublished - 1 Jan 1985

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