A new technique to extract oxide trap time constants in MOSFET's

Ta-Hui Wang; T. E. Chang; L. P. Chiang; C. Huang

doi:10.1109/55.511587

A new technique to extract oxide trap time constants in MOSFET's

Ta-Hui Wang^*, T. E. Chang, L. P. Chiang, C. Huang

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

A new technique to determine oxide trap time constants in a 0.6 μm n-MOSFET subject to hot electron stress has been proposed. In this method, we used GIDL current as a direct monitor of the oxide charge detrapping-induced transient characteristics. An analytical model relating the GIDL current evolution to oxide trap time constants was derived. Our result shows that under a field-emission dominant oxide charge detrapping condition, V_gs = 4 V and V_ds = 3 V, the hot electron stress generated oxide traps exhibit two distinct time constants from seconds to several tens of seconds.

Original language	English
Pages (from-to)	398-400
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	17
Issue number	8
DOIs	https://doi.org/10.1109/55.511587
State	Published - 1 Aug 1996

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title = "A new technique to extract oxide trap time constants in MOSFET's",

abstract = "A new technique to determine oxide trap time constants in a 0.6 μm n-MOSFET subject to hot electron stress has been proposed. In this method, we used GIDL current as a direct monitor of the oxide charge detrapping-induced transient characteristics. An analytical model relating the GIDL current evolution to oxide trap time constants was derived. Our result shows that under a field-emission dominant oxide charge detrapping condition, Vgs = 4 V and Vds = 3 V, the hot electron stress generated oxide traps exhibit two distinct time constants from seconds to several tens of seconds.",

author = "Ta-Hui Wang and Chang, {T. E.} and Chiang, {L. P.} and C. Huang",

year = "1996",

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AU - Wang, Ta-Hui

AU - Chang, T. E.

AU - Chiang, L. P.

AU - Huang, C.

PY - 1996/8/1

Y1 - 1996/8/1

N2 - A new technique to determine oxide trap time constants in a 0.6 μm n-MOSFET subject to hot electron stress has been proposed. In this method, we used GIDL current as a direct monitor of the oxide charge detrapping-induced transient characteristics. An analytical model relating the GIDL current evolution to oxide trap time constants was derived. Our result shows that under a field-emission dominant oxide charge detrapping condition, Vgs = 4 V and Vds = 3 V, the hot electron stress generated oxide traps exhibit two distinct time constants from seconds to several tens of seconds.

AB - A new technique to determine oxide trap time constants in a 0.6 μm n-MOSFET subject to hot electron stress has been proposed. In this method, we used GIDL current as a direct monitor of the oxide charge detrapping-induced transient characteristics. An analytical model relating the GIDL current evolution to oxide trap time constants was derived. Our result shows that under a field-emission dominant oxide charge detrapping condition, Vgs = 4 V and Vds = 3 V, the hot electron stress generated oxide traps exhibit two distinct time constants from seconds to several tens of seconds.

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