A new technique to extract oxide trap time constants in MOSFET's

Ta-Hui Wang*, T. E. Chang, L. P. Chiang, C. Huang

*Corresponding author for this work

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

A new technique to determine oxide trap time constants in a 0.6 μm n-MOSFET subject to hot electron stress has been proposed. In this method, we used GIDL current as a direct monitor of the oxide charge detrapping-induced transient characteristics. An analytical model relating the GIDL current evolution to oxide trap time constants was derived. Our result shows that under a field-emission dominant oxide charge detrapping condition, Vgs = 4 V and Vds = 3 V, the hot electron stress generated oxide traps exhibit two distinct time constants from seconds to several tens of seconds.

Original languageEnglish
Pages (from-to)398-400
Number of pages3
JournalIEEE Electron Device Letters
Volume17
Issue number8
DOIs
StatePublished - 1 Aug 1996

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