Abstract
A new technique to determine oxide trap time constants in a 0.6 μm n-MOSFET subject to hot electron stress has been proposed. In this method, we used GIDL current as a direct monitor of the oxide charge detrapping-induced transient characteristics. An analytical model relating the GIDL current evolution to oxide trap time constants was derived. Our result shows that under a field-emission dominant oxide charge detrapping condition, Vgs = 4 V and Vds = 3 V, the hot electron stress generated oxide traps exhibit two distinct time constants from seconds to several tens of seconds.
Original language | English |
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Pages (from-to) | 398-400 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 17 |
Issue number | 8 |
DOIs | |
State | Published - 1 Aug 1996 |