A new small-signal MOSFET model and parameter extraction method for RF IC's application

Kow-Ming Chang; Han Pang Wang

doi:10.1016/j.mejo.2004.06.001

A new small-signal MOSFET model and parameter extraction method for RF IC's application

Kow-Ming Chang^*, Han Pang Wang

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

In this paper, an accurate and simple small signal model of RF MOSFETs accounting for the distributed gate effect, the substrate parasitics and charge conservation is proposed. Meanwhile, a direct and accurate extraction method using linear regression approach for the components of the equivalent circuit of the MOSFET with S-parameters analysis is also proposed. The proposed model and extraction method are verified with the experimental data and an excellent agreement is obtained up to 10GHz. The extraction results from the measured data for various bias conditions are presented. Also, the extracted parameters, such as transconductance g_m, match well with those obtained from DC measurements. Besides, it is shown that a significant error in circuit performances would be found if the charge conservation is not properly considered.

Original language	American English
Pages (from-to)	749-759
Number of pages	11
Journal	Microelectronics Journal
Volume	35
Issue number	9
DOIs	https://doi.org/10.1016/j.mejo.2004.06.001
State	Published - 1 Sep 2004

Keywords

Gate resistance
Nonreciprocal capacitance
RF MOSFET modeling
Substrate resistance

Access to Document

10.1016/j.mejo.2004.06.001

Fingerprint Dive into the research topics of 'A new small-signal MOSFET model and parameter extraction method for RF IC's application'. Together they form a unique fingerprint.

Cite this

@article{bc595265706e4bd8a3dbe400c4cc8b7b,

title = "A new small-signal MOSFET model and parameter extraction method for RF IC's application",

abstract = "In this paper, an accurate and simple small signal model of RF MOSFETs accounting for the distributed gate effect, the substrate parasitics and charge conservation is proposed. Meanwhile, a direct and accurate extraction method using linear regression approach for the components of the equivalent circuit of the MOSFET with S-parameters analysis is also proposed. The proposed model and extraction method are verified with the experimental data and an excellent agreement is obtained up to 10GHz. The extraction results from the measured data for various bias conditions are presented. Also, the extracted parameters, such as transconductance gm, match well with those obtained from DC measurements. Besides, it is shown that a significant error in circuit performances would be found if the charge conservation is not properly considered.",

keywords = "Gate resistance, Nonreciprocal capacitance, RF MOSFET modeling, Substrate resistance",

author = "Kow-Ming Chang and Wang, {Han Pang}",

year = "2004",

month = sep,

day = "1",

doi = "10.1016/j.mejo.2004.06.001",

language = "American English",

volume = "35",

pages = "749--759",

journal = "Microelectronics Journal",

issn = "0959-8324",

publisher = "Elsevier BV",

number = "9",

}

TY - JOUR

T1 - A new small-signal MOSFET model and parameter extraction method for RF IC's application

AU - Chang, Kow-Ming

AU - Wang, Han Pang

PY - 2004/9/1

Y1 - 2004/9/1

N2 - In this paper, an accurate and simple small signal model of RF MOSFETs accounting for the distributed gate effect, the substrate parasitics and charge conservation is proposed. Meanwhile, a direct and accurate extraction method using linear regression approach for the components of the equivalent circuit of the MOSFET with S-parameters analysis is also proposed. The proposed model and extraction method are verified with the experimental data and an excellent agreement is obtained up to 10GHz. The extraction results from the measured data for various bias conditions are presented. Also, the extracted parameters, such as transconductance gm, match well with those obtained from DC measurements. Besides, it is shown that a significant error in circuit performances would be found if the charge conservation is not properly considered.

AB - In this paper, an accurate and simple small signal model of RF MOSFETs accounting for the distributed gate effect, the substrate parasitics and charge conservation is proposed. Meanwhile, a direct and accurate extraction method using linear regression approach for the components of the equivalent circuit of the MOSFET with S-parameters analysis is also proposed. The proposed model and extraction method are verified with the experimental data and an excellent agreement is obtained up to 10GHz. The extraction results from the measured data for various bias conditions are presented. Also, the extracted parameters, such as transconductance gm, match well with those obtained from DC measurements. Besides, it is shown that a significant error in circuit performances would be found if the charge conservation is not properly considered.

KW - Gate resistance

KW - Nonreciprocal capacitance

KW - RF MOSFET modeling

KW - Substrate resistance

UR - http://www.scopus.com/inward/record.url?scp=3943112265&partnerID=8YFLogxK

U2 - 10.1016/j.mejo.2004.06.001

DO - 10.1016/j.mejo.2004.06.001

M3 - Article

AN - SCOPUS:3943112265

VL - 35

SP - 749

EP - 759

JO - Microelectronics Journal

JF - Microelectronics Journal

SN - 0959-8324

IS - 9

ER -

A new small-signal MOSFET model and parameter extraction method for RF IC's application

Abstract

Keywords

Access to Document

Other files and links

Cite this