TY - JOUR
T1 - A new small-signal MOSFET model and parameter extraction method for RF IC's application
AU - Chang, Kow-Ming
AU - Wang, Han Pang
PY - 2004/9/1
Y1 - 2004/9/1
N2 - In this paper, an accurate and simple small signal model of RF MOSFETs accounting for the distributed gate effect, the substrate parasitics and charge conservation is proposed. Meanwhile, a direct and accurate extraction method using linear regression approach for the components of the equivalent circuit of the MOSFET with S-parameters analysis is also proposed. The proposed model and extraction method are verified with the experimental data and an excellent agreement is obtained up to 10GHz. The extraction results from the measured data for various bias conditions are presented. Also, the extracted parameters, such as transconductance gm, match well with those obtained from DC measurements. Besides, it is shown that a significant error in circuit performances would be found if the charge conservation is not properly considered.
AB - In this paper, an accurate and simple small signal model of RF MOSFETs accounting for the distributed gate effect, the substrate parasitics and charge conservation is proposed. Meanwhile, a direct and accurate extraction method using linear regression approach for the components of the equivalent circuit of the MOSFET with S-parameters analysis is also proposed. The proposed model and extraction method are verified with the experimental data and an excellent agreement is obtained up to 10GHz. The extraction results from the measured data for various bias conditions are presented. Also, the extracted parameters, such as transconductance gm, match well with those obtained from DC measurements. Besides, it is shown that a significant error in circuit performances would be found if the charge conservation is not properly considered.
KW - Gate resistance
KW - Nonreciprocal capacitance
KW - RF MOSFET modeling
KW - Substrate resistance
UR - http://www.scopus.com/inward/record.url?scp=3943112265&partnerID=8YFLogxK
U2 - 10.1016/j.mejo.2004.06.001
DO - 10.1016/j.mejo.2004.06.001
M3 - Article
AN - SCOPUS:3943112265
VL - 35
SP - 749
EP - 759
JO - Microelectronics Journal
JF - Microelectronics Journal
SN - 0959-8324
IS - 9
ER -