A new self-aligned contact technology for III-V MOSFETs

Huaxin Guo*, Xingui Zhang, Hock Chun Chin, Xiao Gong, Shao Ming Koh, Chunlei Zhan, Guang Li Luo, Chun Yen Chang, Hau Yu Lin, Chao-Hsin Chien, Zong You Han, Shih Chiang Huang, Chao Ching Cheng, Chih Hsin Ko, Clement H. Wann, Yee Chia Yeo

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

10 Scopus citations

Abstract

We report the first demonstration of a self-aligned contact technology for III-V MOSFETs. A novel epitaxy process with in-situ surface treatment was developed to selectively form a thin continuous germanium-silicon (GeSi) layer on gallium arsenide (GaAs) source and drain (S/D) regions. By precisely and fully converting the GeSi layer into NiGeSi, while diffusing Ge and Si into GaAs to form heavily n+ doped regions, a novel self-aligned nickel germanosilicide (NiGeSi) ohmic contact was achieved. This is expected to significantly enhance the performance of III-V MOSFETs.

Original languageEnglish
Title of host publicationProceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010
Pages152-153
Number of pages2
DOIs
StatePublished - 20 Oct 2010
Event2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010 - Hsin Chu, Taiwan
Duration: 26 Apr 201028 Apr 2010

Publication series

NameProceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010

Conference

Conference2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010
CountryTaiwan
CityHsin Chu
Period26/04/1028/04/10

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