A new process to improve the performance of 850 nm wavelength GaAs VCSELs

Wen Jang Jiang, Lung Chien Chen, Meng Chyi Wu, Hsin-Chieh Yu, Hung Pin Yang, Chia Pin Sung, Jim Yong Chi, Chun Yuan Huang, Yi Tsuo Wu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

In this article, we propose a new process method to improve the light output power of GaAs vertical-cavity surface-emitting lasers (VCSELs). The VCSELs with filling Al metal into the ring trench will exhibit a higher quantum efficiency and have a light output power of 1.45 times higher than those without filling Al. In addition, the trench filled with Al metal can benefit in the bonding process and behavior as a mirror to reduce the output power loss. These VCSELs show good output characteristics and high-temperature operation.

Original languageEnglish
Pages (from-to)2287-2289
Number of pages3
JournalSolid-State Electronics
Volume46
Issue number12
DOIs
StatePublished - 1 Dec 2002

Keywords

  • Trench filling
  • Vertical-cavity surface-emitting lasers

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