A new procedure to extract ultra-low specific contact resistivity

Hsuan Tzu Tseng*, Bing-Yue Tsui

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

In this work, a new procedure to extract ultra-low specific contact resistivity down to 10 -9 Ω-cm 2 is proposed. Design guidelines of the test structure are analyzed with 3-D simulation. Compared to the typical Cross-bridge-Kelvin resistor structure, the proposed structure has much better accuracy at low resistivity regime, looser design rules, simpler fabrication process.

Original languageEnglish
Title of host publication2012 IEEE International Interconnect Technology Conference, IITC 2012
DOIs
StatePublished - 1 Oct 2012
Event2012 IEEE International Interconnect Technology Conference, IITC 2012 - San Jose, CA, United States
Duration: 4 Jun 20126 Jun 2012

Publication series

Name2012 IEEE International Interconnect Technology Conference, IITC 2012

Conference

Conference2012 IEEE International Interconnect Technology Conference, IITC 2012
CountryUnited States
CitySan Jose, CA
Period4/06/126/06/12

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  • Cite this

    Tseng, H. T., & Tsui, B-Y. (2012). A new procedure to extract ultra-low specific contact resistivity. In 2012 IEEE International Interconnect Technology Conference, IITC 2012 [6251584] (2012 IEEE International Interconnect Technology Conference, IITC 2012). https://doi.org/10.1109/IITC.2012.6251584