A new parallel adaptive finite volume method for the numerical simulation of semiconductor devices

Yi-Ming Li*, Jinn Liang Liu, Tien Sheng Chao, S. M. Sze

*Corresponding author for this work

Research output: Contribution to journalConference article

25 Scopus citations

Abstract

Based on adaptive finite volume approximation, a posteriori error estimation, and monotone iteration, a novel system is proposed for parallel simulations of semiconductor devices. The system has two distinct parallel algorithms to perform a complete set of I-V simulations for any specific device model. The first algorithm is a domain decomposition on 1-irregular unstructured meshes whereas the second is a parallelization of multiple I-V points. Implemented on a Linux cluster using message passing interface libraries, both algorithms are shown to have excellent balances on dynamic loading and hence result in efficient speedup. Compared with measurement data, computational results of sub-micron MOSFET devices are given to demonstrate the accuracy and efficiency of the system.

Original languageEnglish
Pages (from-to)285-289
Number of pages5
JournalComputer Physics Communications
Volume142
Issue number1-3
DOIs
StatePublished - 15 Dec 2001
EventConference on Computational Physics (CCP'2000) - Gold Coast, Qld., Australia
Duration: 3 Dec 20008 Dec 2000

Keywords

  • Adaptive FVM
  • Load balancing
  • Parallel semiconductor device simulation

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