A New On-Chip ESD Protection Circuit with Dual Parasitic SCR Structures for CMOS VLSI

Chung-Yu Wu*, Ming-Dou Ker, Chung Yuan Lee, Joe Ko

*Corresponding author for this work

Research output: Contribution to journalArticle

13 Scopus citations

Abstract

A new CMOS on-chip electrostatic discharge (ESD) protection circuit which consists of dual parasitic SCR structures is proposed and investigated. Experimental results show that with a small layout area of 8800 μm2, the protection circuit can successfully perform negative and positive ESD protection with failure thresholds greater than ±1 and ±10 kV in machine-mode (MM) and human-body-mode (HBM) testing, respectively. The low ESD trigger voltages in both SCR's can be readily achieved through proper circuit design and without involving device or junction breakdown. The input capacitance of the proposed protection circuit is very low and no diffusion resistor between I/O pad and internal circuits is required, so it is suitable for high-speed applications. Moreover, this ESD protection circuit is fully process compatible with CMOS technologies.

Original languageEnglish
Pages (from-to)274-280
Number of pages7
JournalIEEE Journal of Solid-State Circuits
Volume27
Issue number3
DOIs
StatePublished - 1 Jan 1992

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