A new observation of the germanium outdiffusion effect on the hot carrier and NBTI reliabilities in sub-100nm technology strained-Si/SiGe CMOS devices

Steve S. Chung; Y. R. Liu; C. F. Yeh; S. R. Wu; C. S. Lai; T. Y. Chang; J. H. Ho; C. Y. Liu; C. T. Huang; C. T. Tsai; W. T. Shiau; S. W. Sun

doi:10.1109/.2005.1469222

A new observation of the germanium outdiffusion effect on the hot carrier and NBTI reliabilities in sub-100nm technology strained-Si/SiGe CMOS devices

Steve S. Chung^*, Y. R. Liu, C. F. Yeh, S. R. Wu, C. S. Lai, T. Y. Chang, J. H. Ho, C. Y. Liu, C. T. Huang, C. T. Tsai, W. T. Shiau, S. W. Sun

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Conference article › peer-review

24 Scopus citations

Abstract

In this paper, the evidence of SiGe layer induced trap generation and its correlation with enhanced degradation in strained-Si/SiGe CMOS devices have been reported for the first time. First, a new two-level charge pumping(CP) curve has been demonstrated to identify the Ge out-diffusion effect. Secondly, enhanced degradation in strained-Si devices has been clarified based on experimental results. Both n- and p-MOSFE's exhibit different extent of HC degradation effect. This is attributed to the difference in their mobility enhancement as well as additional traps coming from the Si/SiGe interface. Finally, temperature dependence of HC and NBTI has been examined for both strained-Si and bulk devices. Sophisticated measurement techniques, charge pumping and gated-diode (GD) measurements, have been employed to understand the generated interface traps. Results show that strained-Si device is less sensitive to the temperature and has a chance for better NBTI reliability if we have a good control of the strained-Si/SiGe interface, such as through low temperature gate oxide process or better S/D junction formation.

Original language	English
Article number	1469222
Pages (from-to)	86-87
Number of pages	2
Journal	Digest of Technical Papers - Symposium on VLSI Technology
Volume	2005
DOIs	https://doi.org/10.1109/.2005.1469222
State	Published - 1 Dec 2005
Event	2005 Symposium on VLSI Technology - Kyoto, Japan Duration: 14 Jun 2005 → 14 Jun 2005

Keywords

Charge-Pumping(CP)
Gated-Diode(GD) methods
Negative Bias Temperature Instability(NBTI)
Strained-Si devices

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Chung, S. S., Liu, Y. R., Yeh, C. F., Wu, S. R., Lai, C. S., Chang, T. Y., Ho, J. H., Liu, C. Y., Huang, C. T., Tsai, C. T., Shiau, W. T., & Sun, S. W. (2005). A new observation of the germanium outdiffusion effect on the hot carrier and NBTI reliabilities in sub-100nm technology strained-Si/SiGe CMOS devices. Digest of Technical Papers - Symposium on VLSI Technology, 2005, 86-87. [1469222]. https://doi.org/10.1109/.2005.1469222

Chung, Steve S. ; Liu, Y. R. ; Yeh, C. F. ; Wu, S. R. ; Lai, C. S. ; Chang, T. Y. ; Ho, J. H. ; Liu, C. Y. ; Huang, C. T. ; Tsai, C. T. ; Shiau, W. T. ; Sun, S. W. / A new observation of the germanium outdiffusion effect on the hot carrier and NBTI reliabilities in sub-100nm technology strained-Si/SiGe CMOS devices. In: Digest of Technical Papers - Symposium on VLSI Technology. 2005 ; Vol. 2005. pp. 86-87.

@article{dc5eee6321a645809db701456b302b3b,

title = "A new observation of the germanium outdiffusion effect on the hot carrier and NBTI reliabilities in sub-100nm technology strained-Si/SiGe CMOS devices",

abstract = "In this paper, the evidence of SiGe layer induced trap generation and its correlation with enhanced degradation in strained-Si/SiGe CMOS devices have been reported for the first time. First, a new two-level charge pumping(CP) curve has been demonstrated to identify the Ge out-diffusion effect. Secondly, enhanced degradation in strained-Si devices has been clarified based on experimental results. Both n- and p-MOSFE's exhibit different extent of HC degradation effect. This is attributed to the difference in their mobility enhancement as well as additional traps coming from the Si/SiGe interface. Finally, temperature dependence of HC and NBTI has been examined for both strained-Si and bulk devices. Sophisticated measurement techniques, charge pumping and gated-diode (GD) measurements, have been employed to understand the generated interface traps. Results show that strained-Si device is less sensitive to the temperature and has a chance for better NBTI reliability if we have a good control of the strained-Si/SiGe interface, such as through low temperature gate oxide process or better S/D junction formation.",

keywords = "Charge-Pumping(CP), Gated-Diode(GD) methods, Negative Bias Temperature Instability(NBTI), Strained-Si devices",

author = "Chung, {Steve S.} and Liu, {Y. R.} and Yeh, {C. F.} and Wu, {S. R.} and Lai, {C. S.} and Chang, {T. Y.} and Ho, {J. H.} and Liu, {C. Y.} and Huang, {C. T.} and Tsai, {C. T.} and Shiau, {W. T.} and Sun, {S. W.}",

year = "2005",

month = dec,

day = "1",

doi = "10.1109/.2005.1469222",

language = "English",

volume = "2005",

pages = "86--87",

journal = "Digest of Technical Papers - Symposium on VLSI Technology",

issn = "0743-1562",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "null ; Conference date: 14-06-2005 Through 14-06-2005",

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Chung, SS, Liu, YR, Yeh, CF, Wu, SR, Lai, CS, Chang, TY, Ho, JH, Liu, CY, Huang, CT, Tsai, CT, Shiau, WT & Sun, SW 2005, 'A new observation of the germanium outdiffusion effect on the hot carrier and NBTI reliabilities in sub-100nm technology strained-Si/SiGe CMOS devices', Digest of Technical Papers - Symposium on VLSI Technology, vol. 2005, 1469222, pp. 86-87. https://doi.org/10.1109/.2005.1469222

A new observation of the germanium outdiffusion effect on the hot carrier and NBTI reliabilities in sub-100nm technology strained-Si/SiGe CMOS devices. / Chung, Steve S.; Liu, Y. R.; Yeh, C. F.; Wu, S. R.; Lai, C. S.; Chang, T. Y.; Ho, J. H.; Liu, C. Y.; Huang, C. T.; Tsai, C. T.; Shiau, W. T.; Sun, S. W.

In: Digest of Technical Papers - Symposium on VLSI Technology, Vol. 2005, 1469222, 01.12.2005, p. 86-87.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - A new observation of the germanium outdiffusion effect on the hot carrier and NBTI reliabilities in sub-100nm technology strained-Si/SiGe CMOS devices

AU - Chung, Steve S.

AU - Liu, Y. R.

AU - Yeh, C. F.

AU - Wu, S. R.

AU - Lai, C. S.

AU - Chang, T. Y.

AU - Ho, J. H.

AU - Liu, C. Y.

AU - Huang, C. T.

AU - Tsai, C. T.

AU - Shiau, W. T.

AU - Sun, S. W.

PY - 2005/12/1

Y1 - 2005/12/1

N2 - In this paper, the evidence of SiGe layer induced trap generation and its correlation with enhanced degradation in strained-Si/SiGe CMOS devices have been reported for the first time. First, a new two-level charge pumping(CP) curve has been demonstrated to identify the Ge out-diffusion effect. Secondly, enhanced degradation in strained-Si devices has been clarified based on experimental results. Both n- and p-MOSFE's exhibit different extent of HC degradation effect. This is attributed to the difference in their mobility enhancement as well as additional traps coming from the Si/SiGe interface. Finally, temperature dependence of HC and NBTI has been examined for both strained-Si and bulk devices. Sophisticated measurement techniques, charge pumping and gated-diode (GD) measurements, have been employed to understand the generated interface traps. Results show that strained-Si device is less sensitive to the temperature and has a chance for better NBTI reliability if we have a good control of the strained-Si/SiGe interface, such as through low temperature gate oxide process or better S/D junction formation.

AB - In this paper, the evidence of SiGe layer induced trap generation and its correlation with enhanced degradation in strained-Si/SiGe CMOS devices have been reported for the first time. First, a new two-level charge pumping(CP) curve has been demonstrated to identify the Ge out-diffusion effect. Secondly, enhanced degradation in strained-Si devices has been clarified based on experimental results. Both n- and p-MOSFE's exhibit different extent of HC degradation effect. This is attributed to the difference in their mobility enhancement as well as additional traps coming from the Si/SiGe interface. Finally, temperature dependence of HC and NBTI has been examined for both strained-Si and bulk devices. Sophisticated measurement techniques, charge pumping and gated-diode (GD) measurements, have been employed to understand the generated interface traps. Results show that strained-Si device is less sensitive to the temperature and has a chance for better NBTI reliability if we have a good control of the strained-Si/SiGe interface, such as through low temperature gate oxide process or better S/D junction formation.

KW - Charge-Pumping(CP)

KW - Gated-Diode(GD) methods

KW - Negative Bias Temperature Instability(NBTI)

KW - Strained-Si devices

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U2 - 10.1109/.2005.1469222

DO - 10.1109/.2005.1469222

M3 - Conference article

AN - SCOPUS:33745148994

VL - 2005

SP - 86

EP - 87

JO - Digest of Technical Papers - Symposium on VLSI Technology

JF - Digest of Technical Papers - Symposium on VLSI Technology

SN - 0743-1562

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Y2 - 14 June 2005 through 14 June 2005

ER -