A new observation of strain-induced slow traps in advanced CMOS technology with process-induced strain using random telegraph noise measurement

M. H. Lin, E. R. Hsieh, Steve S. Chung, C. H. Tsai, P. W. Liu, Y. H. Lin, C. T. Tsai, G. H. Ma

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Scopus citations

Abstract

In this paper, the hot-carrier induced oxide trap and its correlation with enhanced degradation in strained CMOS devices have been reported for the first time. First, the ID-RTN (Drain Current Random Telegraph Noise) has been employed to study the HC stress induced slow oxide traps in strained nMOSFETs and pMOSFETs. Secondly, different behavior of the slow traps in nMOSFET and pMOSFET has been observed. Results show that the vertical compressive strain generates extra oxide defects and induces more scattering after the HC stress in CESL nMOSFET. This vertical strain in CESL also contributes to a non-negligible amount of extra device degradation. While, SiGe S/D pMOSFET shows different behavior in that the compressive strain in this structure shows no impact on its reliability.

Original languageEnglish
Title of host publication2009 Symposium on VLSI Technology, VLSIT 2009
Pages52-53
Number of pages2
StatePublished - 16 Nov 2009
Event2009 Symposium on VLSI Technology, VLSIT 2009 - Kyoto, Japan
Duration: 16 Jun 200918 Jun 2009

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)0743-1562

Conference

Conference2009 Symposium on VLSI Technology, VLSIT 2009
CountryJapan
CityKyoto
Period16/06/0918/06/09

Keywords

  • Random telegraph noise
  • Slow trap
  • Strained-Si devices

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    Lin, M. H., Hsieh, E. R., Chung, S. S., Tsai, C. H., Liu, P. W., Lin, Y. H., Tsai, C. T., & Ma, G. H. (2009). A new observation of strain-induced slow traps in advanced CMOS technology with process-induced strain using random telegraph noise measurement. In 2009 Symposium on VLSI Technology, VLSIT 2009 (pp. 52-53). [5200632] (Digest of Technical Papers - Symposium on VLSI Technology).