A new model on the mechanisms of high-frequency AC hot-carrier effects in MOS devices

Chung-Yu Wu, Charng Feng Hsu, Ying Che Wu, S. H. Yang, Joe Ko, Larry Lin

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

A self-consistent qualitative model for the degradation and mechanism of high-frequency AC hot-carrier effects has been successfully developed and experimentally verified. According to the model, hot electrons are injected to break the Si-H bounds and produce the trivalent silicon. Subsequently, hole trapping and electron trapping with the trivalent silicon occur and the released energy produces interface states in the channel region. This leads to the degradation in DDD and LDD MOSFETs. But hot-electron-induced charge trapping also occurs in the n- region of LDD MOSFETs, which causes Gm degradation. Applying the developed model, degradation behaviors and mechanism in AC stress can be well explained. Moreover, worst-case inverter-like stress in DDD MOSFETs is shown to have a greater degradation than the DC stress. Maximum degradation in MOSFETs has been observed at certain frequencies.

Original languageEnglish
Title of host publication1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers, VTSA 1991
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages288-292
Number of pages5
ISBN (Electronic)078030036X, 9780780300361
DOIs
StatePublished - 1 Jan 1991
Event1991 International Symposium on VLSI Technology, Systems, and Applications, VTSA 1991 - Taipei, Taiwan
Duration: 22 May 199124 May 1991

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings
ISSN (Print)1930-8868

Conference

Conference1991 International Symposium on VLSI Technology, Systems, and Applications, VTSA 1991
CountryTaiwan
CityTaipei
Period22/05/9124/05/91

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