A New methodology for probing the electrical properties of heavily phosphorous-doped polycrystalline silicon nanowires

Horng-Chih Lin*, Zer Ming Lin, Tiao Yuan Huang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

In this study, we proposed a new methodology for probing the electrical properties of heavily doped polycrystalline silicon (poly-Si) nanowires (NWs), including active doping concentration, mobility, and interface fixed charge density. Implementation of this procedure is based on the modulation of the device operation of a gate-all-around (GAA) junctionless (J-less) transistor from the gated resistor mode to the ungated one. The extracted carrier concentration in the NW is found to be much lower than that of Hall measurements, while a negative fixed charge density is identified with the procedure. Dopant segregation at the oxide interface is postulated to be closely related to these observations.

Original languageEnglish
Article number04CC18
JournalJapanese journal of applied physics
Volume52
Issue number4 PART 2
DOIs
StatePublished - 1 Apr 2013

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