A new method for determining the terminal series resistances and high-injection coefficient of bipolar transistors in CMOS integrated circuits for computer-aided circuit modeling

Yeu Haw Yang*, Chung-Yu Wu, Wen Yang Chen

*Corresponding author for this work

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

A new method for determining the terminal collector, base, and emitter series resistances and high-injection coefficient of bipolar transistors in bulk CMOS IC's is proposed. Based upon the Ic-VBE and Ib-VBE characteristics in the high current region, the method is successfully applied to determine the terminal series resistances and high-injection coefficient of a bipolar transistor. Results from SPICE simulation data verify the correctness of the proposed method. The agreement between the measured and calculated I-V characteristics is good.

Original languageEnglish
Pages (from-to)929-936
Number of pages8
JournalSolid State Electronics
Volume31
Issue number5
DOIs
StatePublished - 1 Jan 1988

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