A new method for characterizing the spatial distributions of interface states and oxide-trapped charges in LDD n-MOSFET's

Robert Lee Giahn-Horng; Jen Shien Su; Steve S. Chung

doi:10.1109/16.477596

A new method for characterizing the spatial distributions of interface states and oxide-trapped charges in LDD n-MOSFET's

Robert Lee Giahn-Horng, Jen Shien Su^*, Steve S. Chung

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

45 Scopus citations

Abstract

-Previous studies showed that simultaneous determination of the interface states (Nu) and oxide-trapped charges (Qox ) in the vicinity of the drain side in MOS devices was rather difficult. A new technique which allows a consistent characterization of the spatial distributions of both hot-carrier-induced NH and Qox is presented. Submicron LDD n-MOS devices were tested and charge pumping measurements were performed. The spatial distributions of both N\t and Q, have been justified by two-dimensional (2-D) device simulation of the I-Y characteristics for devices before and after the stress. Comparison of the drain current characteristics between simulation and experiment shows very good agreement. Moreover, results show that fixed-oxide charge effect is less pronounced to the device degradation for the experimental LDD-type n-MOS devices.

Original language	English
Pages (from-to)	81-89
Number of pages	9
Journal	IEEE Transactions on Electron Devices
Volume	43
Issue number	1
DOIs	https://doi.org/10.1109/16.477596
State	Published - 1 Dec 1996

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abstract = "-Previous studies showed that simultaneous determination of the interface states (Nu) and oxide-trapped charges (Qox ) in the vicinity of the drain side in MOS devices was rather difficult. A new technique which allows a consistent characterization of the spatial distributions of both hot-carrier-induced NH and Qox is presented. Submicron LDD n-MOS devices were tested and charge pumping measurements were performed. The spatial distributions of both N\t and Q, have been justified by two-dimensional (2-D) device simulation of the I-Y characteristics for devices before and after the stress. Comparison of the drain current characteristics between simulation and experiment shows very good agreement. Moreover, results show that fixed-oxide charge effect is less pronounced to the device degradation for the experimental LDD-type n-MOS devices.",

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AB - -Previous studies showed that simultaneous determination of the interface states (Nu) and oxide-trapped charges (Qox ) in the vicinity of the drain side in MOS devices was rather difficult. A new technique which allows a consistent characterization of the spatial distributions of both hot-carrier-induced NH and Qox is presented. Submicron LDD n-MOS devices were tested and charge pumping measurements were performed. The spatial distributions of both N\t and Q, have been justified by two-dimensional (2-D) device simulation of the I-Y characteristics for devices before and after the stress. Comparison of the drain current characteristics between simulation and experiment shows very good agreement. Moreover, results show that fixed-oxide charge effect is less pronounced to the device degradation for the experimental LDD-type n-MOS devices.

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A new method for characterizing the spatial distributions of interface states and oxide-trapped charges in LDD n-MOSFET's

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