Abstract
-Previous studies showed that simultaneous determination of the interface states (Nu) and oxide-trapped charges (Qox ) in the vicinity of the drain side in MOS devices was rather difficult. A new technique which allows a consistent characterization of the spatial distributions of both hot-carrier-induced NH and Qox is presented. Submicron LDD n-MOS devices were tested and charge pumping measurements were performed. The spatial distributions of both N\t and Q, have been justified by two-dimensional (2-D) device simulation of the I-Y characteristics for devices before and after the stress. Comparison of the drain current characteristics between simulation and experiment shows very good agreement. Moreover, results show that fixed-oxide charge effect is less pronounced to the device degradation for the experimental LDD-type n-MOS devices.
Original language | English |
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Pages (from-to) | 81-89 |
Number of pages | 9 |
Journal | IEEE Transactions on Electron Devices |
Volume | 43 |
Issue number | 1 |
DOIs | |
State | Published - 1 Dec 1996 |