A new method for accurate extraction of source resistance and effective mobility in nanoscale multifinger nMOSFETs

Jyh-Chyurn Guo, Yi Zen Lo

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

A new method is is developed for accurate extraction of the effective mobility (μeff) in the multifinger nMOSFETs with various poly-to-poly (PO-PO) spaces. The wide PO-PO space intends to increase the tensile stress from a contact etching stop layer (CESL) and yields higher μeff in the nMOSFETs. However, the source resistance (RS) emerges as a critical parasitic element in the multifinger devices with a large finger number. The wide PO-PO space generally leads to the further increase of RS, which may offset μeff improvement and degrade transconductance (gm). A two-end source line is proposed to reduce RS and the impact on gm. The complicated layout-dependent effects containing the CESL strain, RS, and 3-D fringing capacitances bring a crucial challenge to the μeff extraction. In this paper, a distributed transmission line model is derived for a reliable determination of RS, which is a key to the realization of accurate extraction of μeff and layout-dependent effects in multifinger devices.

Original languageEnglish
Article number7181674
Pages (from-to)3004-3011
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume62
Issue number9
DOIs
StatePublished - 1 Sep 2015

Keywords

  • Contact etching stop layer (CESL) strain
  • effective mobility (μeff)
  • layout-dependent effects
  • multifinger
  • source resistance (RS)
  • transmission line (TML)

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