A new low voltage CMOS micromixer for 2.45GHz applications

Chin-Hsien Yen; Win-Ming Chang; Kuo-Hua Cheng; Christina Jou

A new low voltage CMOS micromixer for 2.45GHz applications

Chin-Hsien Yen, Win-Ming Chang, Kuo-Hua Cheng, Christina Jou

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

This paper presents a new low voltage CMOS micromixer for 2.45GHz applications, which operates at 1V supply voltage. The new low voltage CMOS micromixer topology modified from basic BJT micromixer uses coupling capacitors to feed the RF signal so as to bias the two transistors in RF stage separately with lower voltage. The charge injection method is also adopted to improve the conversion gain and linearity under low voltage operation. With a power consumption of 1.72 mW the measurement shows voltage gain of 8.28 dB, input 1dB compression point of -5.63 dBm and input third-order intercept point of 4.21 dBm.

Original language	American English
Title of host publication	2006 INTERNATIONAL SYMPOSIUM ON VLSI DESIGN, AUTOMATION, AND TEST (VLSI-DAT), PROCEEDINGS OF TECHNICAL PAPERS
Publisher	IEEE
Pages	301-+
ISBN (Print)	1-4244-0179-8
State	Published - 2006
Event	2006 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2006 - Hsinchu, Taiwan Duration: 26 Apr 2007 → 28 Apr 2007

Conference

Conference	2006 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2006
Country	Taiwan
City	Hsinchu
Period	26/04/07 → 28/04/07

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Cite this

@inproceedings{20640ca57f774baebfb4a250f3080044,

title = "A new low voltage CMOS micromixer for 2.45GHz applications",

abstract = "This paper presents a new low voltage CMOS micromixer for 2.45GHz applications, which operates at 1V supply voltage. The new low voltage CMOS micromixer topology modified from basic BJT micromixer uses coupling capacitors to feed the RF signal so as to bias the two transistors in RF stage separately with lower voltage. The charge injection method is also adopted to improve the conversion gain and linearity under low voltage operation. With a power consumption of 1.72 mW the measurement shows voltage gain of 8.28 dB, input 1dB compression point of -5.63 dBm and input third-order intercept point of 4.21 dBm.",

author = "Chin-Hsien Yen and Win-Ming Chang and Kuo-Hua Cheng and Christina Jou",

year = "2006",

language = "American English",

isbn = "1-4244-0179-8",

pages = "301--+",

booktitle = "2006 INTERNATIONAL SYMPOSIUM ON VLSI DESIGN, AUTOMATION, AND TEST (VLSI-DAT), PROCEEDINGS OF TECHNICAL PAPERS",

publisher = "IEEE",

note = "2006 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2006 ; Conference date: 26-04-2007 Through 28-04-2007",

}

TY - GEN

T1 - A new low voltage CMOS micromixer for 2.45GHz applications

AU - Yen, Chin-Hsien

AU - Chang, Win-Ming

AU - Cheng, Kuo-Hua

AU - Jou, Christina

PY - 2006

Y1 - 2006

N2 - This paper presents a new low voltage CMOS micromixer for 2.45GHz applications, which operates at 1V supply voltage. The new low voltage CMOS micromixer topology modified from basic BJT micromixer uses coupling capacitors to feed the RF signal so as to bias the two transistors in RF stage separately with lower voltage. The charge injection method is also adopted to improve the conversion gain and linearity under low voltage operation. With a power consumption of 1.72 mW the measurement shows voltage gain of 8.28 dB, input 1dB compression point of -5.63 dBm and input third-order intercept point of 4.21 dBm.

AB - This paper presents a new low voltage CMOS micromixer for 2.45GHz applications, which operates at 1V supply voltage. The new low voltage CMOS micromixer topology modified from basic BJT micromixer uses coupling capacitors to feed the RF signal so as to bias the two transistors in RF stage separately with lower voltage. The charge injection method is also adopted to improve the conversion gain and linearity under low voltage operation. With a power consumption of 1.72 mW the measurement shows voltage gain of 8.28 dB, input 1dB compression point of -5.63 dBm and input third-order intercept point of 4.21 dBm.

M3 - Conference contribution

SN - 1-4244-0179-8

SP - 301-+

BT - 2006 INTERNATIONAL SYMPOSIUM ON VLSI DESIGN, AUTOMATION, AND TEST (VLSI-DAT), PROCEEDINGS OF TECHNICAL PAPERS

PB - IEEE

T2 - 2006 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2006

Y2 - 26 April 2007 through 28 April 2007

ER -