A new insight into correlation between DC And AC hot-carrier degradation of MOS devices

Khandker N. Quader, Ping K. Ko, Chen-Ming Hu

Research output: Contribution to journalConference articlepeer-review

9 Scopus citations

Abstract

Experimental comparison of DC and AC hot-carrier stress results suggest no indication of AC enhancement in digital circuits. Hot-carrier degradation behaviors of low and high-trap density oxides are compared to show that steep frequency degradation can be associated with high-trap density oxides. DC saturation drain current change can adequately explain such steep frequency degradation and is a better monitor for hot-carrier lifetime.

Original languageEnglish
Article number760221
Pages (from-to)13-14
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
DOIs
StatePublished - 1 Jan 1993
Event1993 13th Symposium on VLSI Technology, VLSIT 1993 - Kyoto, Japan
Duration: 17 May 199319 May 1993

Fingerprint Dive into the research topics of 'A new insight into correlation between DC And AC hot-carrier degradation of MOS devices'. Together they form a unique fingerprint.

Cite this