Experimental comparison of DC and AC hot-carrier stress results suggest no indication of AC enhancement in digital circuits. Hot-carrier degradation behaviors of low and high-trap density oxides are compared to show that steep frequency degradation can be associated with high-trap density oxides. DC saturation drain current change can adequately explain such steep frequency degradation and is a better monitor for hot-carrier lifetime.
|Number of pages||2|
|Journal||Digest of Technical Papers - Symposium on VLSI Technology|
|State||Published - 1 Jan 1993|
|Event||1993 13th Symposium on VLSI Technology, VLSIT 1993 - Kyoto, Japan|
Duration: 17 May 1993 → 19 May 1993