A new high voltage IC with robust isolation design

Vivek Ningaraju*, Horng-Chih Lin, Po An Chen, Jiin Shiarng Wen

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A new and robust isolation design for control devices integrated in the high side island region of 250V high-voltage integrated circuits (HVIC) is proposed and verified by numerical calculations, simulations and experiments. The new isolation structure can be realized using micro N-well in the P-type isolation region to achieve a higher breakdown voltage (BV). The measurement and TCAD simulation results prove this new isolation structure's BV is over 350V with negligible leakage current. In the proposed scheme BV is improved by 15% more than the conventional structure without adding additional process steps and photo layers.

Original languageEnglish
Title of host publication2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-2
Number of pages2
ISBN (Electronic)9781538648254
DOIs
StatePublished - 3 Jul 2018
Event2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018 - Hsinchu, Taiwan
Duration: 16 Apr 201819 Apr 2018

Publication series

Name2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018

Conference

Conference2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018
CountryTaiwan
CityHsinchu
Period16/04/1819/04/18

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