A new gate dielectric HfLaO with metal gate work function tuning capability and superior NMOSFETs performance

X. P. Wang*, M. F. Li, Albert Chin, C. Zhu, Ren Chi, X. F. Yu, C. Shen, A. Y. Du, D. S.H. Chan, Dim Lee Kwong

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Using a novel HfLaO gate dielectric for MOSFETs, we report for the first time that TaN (or HfN) metal gate work function can be effectively tuned from Si mid-gap to the conduction band by increasing La composition to fit the requirement of NMOSFETs. We also show the superior performance of the NMOSFETs compared with those using pure HfO2 gate dielectric: (1) dielectric crystallization temperature raised to 900 °C, (2) 60-70% enhancement of drive current Ion and electron mobility, (3) one order reduction of dielectric charge trapping and BTI, and (4) around 5 orders reduction of gate current compared with SiO2 at the same EOT of 1.2-1.8 nm.

Original languageEnglish
Title of host publication2005 International Semiconductor Device Research Symposium
Pages242-243
Number of pages2
DOIs
StatePublished - 1 Dec 2005
Event2005 International Semiconductor Device Research Symposium - Bethesda, MD, United States
Duration: 7 Dec 20059 Dec 2005

Publication series

Name2005 International Semiconductor Device Research Symposium
Volume2005

Conference

Conference2005 International Semiconductor Device Research Symposium
CountryUnited States
CityBethesda, MD
Period7/12/059/12/05

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