A new GaSb/AlSb/GaSb/AlSb/InAs double-barrier interband tunneling diode and its tunneling mechanism

L. Yang*, Jenn-Fang Chen, A. Y. Cho

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

38 Scopus citations

Abstract

We propose and demonstrate a new GaSb/AlSb/GaSb/AlSb/InAs double-barrier interband tunneling diode with a peak-current density as high as 7.6 kA/cm 2 and a peak-to-valley current ratio of 5. In this device, the electrons in the InAs conduction band can resonantly tunnel through the AlSb/GaSb/AlSb double barrier into the GaSb valence band. By narrowing the GaSb well width from 65 to 30 Å, a drastic reduction of the tunneling current was found experimentally. This reduction is interpreted as evidences of the effect of the interband resonant tunneling process and the role of the light hole in the GaSb valence band. In addition, compared with the InAs/AlSb/GaSb/AlSb/InAs tunneling structure, a twice larger peak current density was obtained in the proposed structure which is attributed to a larger density of states of the GaSb light hole valence band compared with that of the InAs conduction band.

Original languageEnglish
Pages (from-to)2997-3000
Number of pages4
JournalJournal of Applied Physics
Volume68
Issue number6
DOIs
StatePublished - 1 Dec 1990

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