A new five-mask-count process for fabricating CMOS inverters with poly-Si NW channels is demonstrated. The fabricated devices show reasonable symmetric driving current by well-designed structural parameters. From voltage transfer characteristics (VTC), an abrupt transition, large noise margins, and high voltage gain are obtained with a supply voltage of 5V.
|Number of pages||4|
|Journal||Digest of Technical Papers - SID International Symposium|
|State||Published - 1 Jan 2012|
|Event||49th SID International Symposium, Seminar and Exhibition, dubbed Display Week, 2012 - Boston, United States|
Duration: 3 Jun 2012 → 8 Jun 2012