A new ESD failure mechanism has been found in the analog pins with pure-diode protection scheme during ND-mode ESD stress. The failure is caused by the parasitic npn interaction between ESD protection diode and guard ring structure. The parasitic npn bipolar, which was constructed between the N+/PW diode and the N+/NW guard ring, provides the discharging path between the I/O pad to the grounded VDD under the ND-mode ESD stress to cause a low ESD robustness of the analog I/O cell. The solution to overcome this ESD failure is also proposed.
|Number of pages||4|
|State||Published - 5 Dec 2005|
|Event||12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2005 - Singapore, Singapore|
Duration: 27 Jun 2005 → 1 Jul 2005
|Conference||12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2005|
|Period||27/06/05 → 1/07/05|