A new fabrication technique for silicon nanowires

Jeng-Tzong Sheu*, J. M. Kuo, K. S. You, C. C. Chen, Kow-Ming Chang

*Corresponding author for this work

Research output: Contribution to journalConference article

6 Scopus citations

Abstract

A new method is proposed for fabricating silicon nanowires (SiNWs) on silicon substrates instead of on SOI wafers, providing a cheaper process; it also enables their electrical properties to be measured easily. Using scanning probe lithography, mask patterns for SiNWs were defined on a (110)-oriented bare silicon wafer. Subsequently silicon nitride spacers were produced and utilized to protect SiNWs during a dry-oxidation process, which was applied to isolate the SiNWs from the substrate. The field induced oxide mask patterns generated with a scanning probe microscope were around 50-60 nm in width, and SiNWs with 34 nm in width and 160 nm in height resulted after wet potassium hydroxide (KOH) orientation-dependent etching at 40° for 400 s. SiNWs with line width around 34 nm on the bare silicon wafer were achieved with the scanning probe lithography process and conventional IC processing.

Original languageEnglish
Pages (from-to)594-598
Number of pages5
JournalMicroelectronic Engineering
Volume73-74
DOIs
StatePublished - 1 Jan 2004
EventMicro and Nano Engineering 2003 - Cambridge, United Kingdom
Duration: 22 Sep 200325 Sep 2003

Keywords

  • Negative resistance
  • Orientation-dependent etching
  • Scanning-probe lithography
  • Silicon nanowires

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