A new evaluation method of the threshold voltage for a low temperature poly-silicon thin film transistor in a source follower configuration

Shi Zhe Huang*, Ya-Hsiang Tai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A new evaluation method of the output voltage for the source follower composed of a LTPS TFT is proposed. This method provides an effective and more precise description about the unsaturated output voltage behavior of the source follower with a LTPS TFT. A new interpretation of the threshold voltage of LTPS TFT is also provided.

Original languageEnglish
Title of host publicationProceedings of the International Display Manufacturing Conference and Exhibition, IDMC'05
EditorsH.P. David Shieh, F.C. Chen
Pages442-444
Number of pages3
StatePublished - 1 Dec 2005
EventInternational Display Manufacturing Conference and Exhibition, IDMC'05 - Taipei, Japan
Duration: 21 Feb 200524 Feb 2005

Publication series

NameInternational Display Manufacturing Conference and Exhibition, IDMC'05

Conference

ConferenceInternational Display Manufacturing Conference and Exhibition, IDMC'05
CountryJapan
CityTaipei
Period21/02/0524/02/05

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