A New Compact Model for Accurate Simulation of RF Noise in Sub-40nm Multi-Finger nMOSFETs

Jyh-Chyurn Guo, Kuo Liang Yeh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A new compact model has been developed in this paper for accurate simulation of RF noise and extraction of actual intrinsic noise in sub-40 nm multi-finger nMOSFETs. This model can predict and verify the excess noise sources before and after deembedding, the mechanism responsible for the complicated layout dependence in various noise parameters, and facilitate optimization design for low noise devices and circuits in nanoscale CMOS technology.

Original languageEnglish
Title of host publicationEuMIC 2018 - 2018 13th European Microwave Integrated Circuits Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages146-149
Number of pages4
ISBN (Electronic)9782874870521
DOIs
StatePublished - 16 Nov 2018
Event13th European Microwave Integrated Circuits Conference, EuMIC 2018 - Madrid, Spain
Duration: 24 Sep 201825 Sep 2018

Publication series

NameEuMIC 2018 - 2018 13th European Microwave Integrated Circuits Conference

Conference

Conference13th European Microwave Integrated Circuits Conference, EuMIC 2018
CountrySpain
CityMadrid
Period24/09/1825/09/18

Keywords

  • CMOS
  • Compact model
  • RF noise
  • layout dependence
  • multi-finger
  • nanoscale

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    Guo, J-C., & Yeh, K. L. (2018). A New Compact Model for Accurate Simulation of RF Noise in Sub-40nm Multi-Finger nMOSFETs. In EuMIC 2018 - 2018 13th European Microwave Integrated Circuits Conference (pp. 146-149). [8539965] (EuMIC 2018 - 2018 13th European Microwave Integrated Circuits Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/EuMIC.2018.8539965