A New Approach to Model CMOS Latchup

Chung-Yu Wu*, Yeu Haw Yang, Chih Chang, Ching Chu Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

Based upon the concept of the λ-type I~V characteristics, CMOS latchup is modeled and latchup criteria are constructed. According to the model and the criteria, conditions which lead to latchup can be expressed in terms of triggering currents, parasitic resistances, and device parameters. Therefore, latchup initiation can be predicted. Both transient simulation results and experimental results coincide with theoretical predictions and calculations. This substantiates the correctness of the proposed model.

Original languageEnglish
Pages (from-to)1642-1653
Number of pages12
JournalIEEE Transactions on Electron Devices
Volume32
Issue number9
DOIs
StatePublished - 1 Jan 1985

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