A New Approach to Determine the Drain-and-Source Series Resistance of LDD MOSFET's

Steve S. Chung, Jenq Sheng Lee

Research output: Contribution to journalArticlepeer-review

41 Scopus citations

Abstract

A new method for determining the intrinsic drain-and-source series resistance and the effective channel length of LDD MOSFET's is proposed. The method is based on the experimentally measured device I-V characteristics and a new parameter extraction procedure. A consistent set of the effective channel length and the gate-voltage-dependent drain-and-source series resistance was thus determined. The comparison between the measured and experimental drain current characteristics shows excellent agreement using the present model values.

Original languageEnglish
Pages (from-to)1709-1711
Number of pages3
JournalIEEE Transactions on Electron Devices
Volume40
Issue number9
DOIs
StatePublished - 1 Jan 1993

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