The authors present a novel approach for modeling hot-electron-induced change in drain current for both forward and reverse modes of operation. The change in drain current, Delta ID, is implemented as an asymmetrical voltage-controlled current source. The authors first present the physical basis of the model and derive the analytical model equations. the implementation scheme for the analytical Delta ID model in the BERT (Berkeley Reliability Tool) simulator and a detailed evaluation of the model as a function of different device and circuit parameters are also given. Simulation results of unidirectional and bidirectional circuits based on the new model are presented.