A new approach for simulation of circuit degradation due to hot-electron damage in NMOSFETs

Khandker N. Quader, Chester Li, Robert Tu, Elyse Rosenbaum, Ping Ko, Chen-Ming Hu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Scopus citations

Abstract

The authors present a novel approach for modeling hot-electron-induced change in drain current for both forward and reverse modes of operation. The change in drain current, Delta ID, is implemented as an asymmetrical voltage-controlled current source. The authors first present the physical basis of the model and derive the analytical model equations. the implementation scheme for the analytical Delta ID model in the BERT (Berkeley Reliability Tool) simulator and a detailed evaluation of the model as a function of different device and circuit parameters are also given. Simulation results of unidirectional and bidirectional circuits based on the new model are presented.

Original languageEnglish
Title of host publicationInternational Electron Devices Meeting 1991, IEDM 1991
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages337-340
Number of pages4
ISBN (Electronic)0780302435
DOIs
StatePublished - 1 Jan 1991
EventInternational Electron Devices Meeting, IEDM 1991 - Washington, United States
Duration: 8 Dec 199111 Dec 1991

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume1991-January
ISSN (Print)0163-1918

Conference

ConferenceInternational Electron Devices Meeting, IEDM 1991
CountryUnited States
CityWashington
Period8/12/9111/12/91

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    Quader, K. N., Li, C., Tu, R., Rosenbaum, E., Ko, P., & Hu, C-M. (1991). A new approach for simulation of circuit degradation due to hot-electron damage in NMOSFETs. In International Electron Devices Meeting 1991, IEDM 1991 (pp. 337-340). [235384] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 1991-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.1991.235384