A new and simple DC method for thermal-resistance extraction of scaled FinFET devices

Wei Cheng Huang*, Pin Su

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This work proposes a new and simple hot-chuck measurement method for the extraction of the thermal resistance of FinFETs. The intrinsic transconductance that eliminates the parasitic source/drain resistance effect can serve as a temperature sensor to characterize the device temperature rise due to self-heating. Our method requires only DC measurements without the need of special test structures.

Original languageEnglish
Title of host publication2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-2
Number of pages2
ISBN (Electronic)9781538648254
DOIs
StatePublished - 3 Jul 2018
Event2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018 - Hsinchu, Taiwan
Duration: 16 Apr 201819 Apr 2018

Publication series

Name2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018

Conference

Conference2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018
CountryTaiwan
CityHsinchu
Period16/04/1819/04/18

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  • Cite this

    Huang, W. C., & Su, P. (2018). A new and simple DC method for thermal-resistance extraction of scaled FinFET devices. In 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018 (pp. 1-2). (2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA.2018.8403832