A new analytical model for low voltage hot electron taking Auger recombination as well as phonon scattering process into account

Shirota Riichiro, Tetsuya Yamaguchi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

The authors describe a novel accurate model and a numerical analysis of hot electron injection into the gate oxide of submicron MOSFETs in the low applied voltage region (VGS<5 V, VDS<3 V). The model quantitatively takes into account both the Auger recombination process and the phonon assist process. Calculated results agree with experimental results in the measured range of 2.3 V<VDS<2.7 V and 2.5 V<VGS<4.1 V. This agreement strongly indicates that the new model can give an accurate understanding of the injection mechanism, and successfully explains the low voltage hot electron phenomena.

Original languageEnglish
Title of host publicationInternational Electron Devices Meeting 1991, IEDM 1991
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages123-126
Number of pages4
ISBN (Electronic)0780302435
DOIs
StatePublished - 1 Jan 1991
EventInternational Electron Devices Meeting, IEDM 1991 - Washington, United States
Duration: 8 Dec 199111 Dec 1991

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume1991-January
ISSN (Print)0163-1918

Conference

ConferenceInternational Electron Devices Meeting, IEDM 1991
CountryUnited States
CityWashington
Period8/12/9111/12/91

Keywords

  • Absorption
  • Analytical models
  • Charge carrier processes
  • Distribution functions
  • Equations
  • Low voltage
  • MOSFETs
  • Phonons
  • Secondary generated hot electron injection
  • Spontaneous emission

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