A new analytical model for low voltage hot electron taking Auger recombination as well as phonon scattering process into account

Shirota Riichiro; Tetsuya Yamaguchi

doi:10.1109/IEDM.1991.235485

A new analytical model for low voltage hot electron taking Auger recombination as well as phonon scattering process into account

Shirota Riichiro, Tetsuya Yamaguchi

Department of Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

The authors describe a novel accurate model and a numerical analysis of hot electron injection into the gate oxide of submicron MOSFETs in the low applied voltage region (V_GS<5 V, V_DS<3 V). The model quantitatively takes into account both the Auger recombination process and the phonon assist process. Calculated results agree with experimental results in the measured range of 2.3 V<V_DS<2.7 V and 2.5 V<V_GS<4.1 V. This agreement strongly indicates that the new model can give an accurate understanding of the injection mechanism, and successfully explains the low voltage hot electron phenomena.

Original language	English
Title of host publication	International Electron Devices Meeting 1991, IEDM 1991
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	123-126
Number of pages	4
ISBN (Electronic)	0780302435
DOIs	https://doi.org/10.1109/IEDM.1991.235485
State	Published - 1 Jan 1991
Event	International Electron Devices Meeting, IEDM 1991 - Washington, United States Duration: 8 Dec 1991 → 11 Dec 1991

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	1991-January
ISSN (Print)	0163-1918

Conference

Conference	International Electron Devices Meeting, IEDM 1991
Country	United States
City	Washington
Period	8/12/91 → 11/12/91

Keywords

Absorption
Analytical models
Charge carrier processes
Distribution functions
Equations
Low voltage
MOSFETs
Phonons
Secondary generated hot electron injection
Spontaneous emission

Access to Document

10.1109/IEDM.1991.235485

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Riichiro, S., & Yamaguchi, T. (1991). A new analytical model for low voltage hot electron taking Auger recombination as well as phonon scattering process into account. In International Electron Devices Meeting 1991, IEDM 1991 (pp. 123-126). [235485] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 1991-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.1991.235485

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title = "A new analytical model for low voltage hot electron taking Auger recombination as well as phonon scattering process into account",

abstract = "The authors describe a novel accurate model and a numerical analysis of hot electron injection into the gate oxide of submicron MOSFETs in the low applied voltage region (VGS<5 V, VDS<3 V). The model quantitatively takes into account both the Auger recombination process and the phonon assist process. Calculated results agree with experimental results in the measured range of 2.3 V<VDS<2.7 V and 2.5 V<VGS<4.1 V. This agreement strongly indicates that the new model can give an accurate understanding of the injection mechanism, and successfully explains the low voltage hot electron phenomena.",

keywords = "Absorption, Analytical models, Charge carrier processes, Distribution functions, Equations, Low voltage, MOSFETs, Phonons, Secondary generated hot electron injection, Spontaneous emission",

author = "Shirota Riichiro and Tetsuya Yamaguchi",

year = "1991",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Riichiro, S & Yamaguchi, T 1991, A new analytical model for low voltage hot electron taking Auger recombination as well as phonon scattering process into account. in International Electron Devices Meeting 1991, IEDM 1991., 235485, Technical Digest - International Electron Devices Meeting, IEDM, vol. 1991-January, Institute of Electrical and Electronics Engineers Inc., pp. 123-126, International Electron Devices Meeting, IEDM 1991, Washington, United States, 8/12/91. https://doi.org/10.1109/IEDM.1991.235485

A new analytical model for low voltage hot electron taking Auger recombination as well as phonon scattering process into account. / Riichiro, Shirota; Yamaguchi, Tetsuya.

International Electron Devices Meeting 1991, IEDM 1991. Institute of Electrical and Electronics Engineers Inc., 1991. p. 123-126 235485 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 1991-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - The authors describe a novel accurate model and a numerical analysis of hot electron injection into the gate oxide of submicron MOSFETs in the low applied voltage region (VGS<5 V, VDS<3 V). The model quantitatively takes into account both the Auger recombination process and the phonon assist process. Calculated results agree with experimental results in the measured range of 2.3 V<VDS<2.7 V and 2.5 V<VGS<4.1 V. This agreement strongly indicates that the new model can give an accurate understanding of the injection mechanism, and successfully explains the low voltage hot electron phenomena.

AB - The authors describe a novel accurate model and a numerical analysis of hot electron injection into the gate oxide of submicron MOSFETs in the low applied voltage region (VGS<5 V, VDS<3 V). The model quantitatively takes into account both the Auger recombination process and the phonon assist process. Calculated results agree with experimental results in the measured range of 2.3 V<VDS<2.7 V and 2.5 V<VGS<4.1 V. This agreement strongly indicates that the new model can give an accurate understanding of the injection mechanism, and successfully explains the low voltage hot electron phenomena.

KW - Absorption

KW - Analytical models

KW - Charge carrier processes

KW - Distribution functions

KW - Equations

KW - Low voltage

KW - MOSFETs

KW - Phonons

KW - Secondary generated hot electron injection

KW - Spontaneous emission

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EP - 126

BT - International Electron Devices Meeting 1991, IEDM 1991

PB - Institute of Electrical and Electronics Engineers Inc.

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Riichiro S, Yamaguchi T. A new analytical model for low voltage hot electron taking Auger recombination as well as phonon scattering process into account. In International Electron Devices Meeting 1991, IEDM 1991. Institute of Electrical and Electronics Engineers Inc. 1991. p. 123-126. 235485. (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.1991.235485