A multilevel metal interconnect technology with intra-metal air-gap for quarter-micron-and-beyond high-performance processes

M. Lin*, C. Y. Chang, T. Y. Huang, M. L. Lin, Horng-Chih Lin

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

A multilevel metal interconnect with air-gap has been developed to reduce RC delay time for quick turn-around-time foundry manufacturing. The air-gap method has been successfully applied to 0.25 μm foundry technology. Measurements on ring oscillators confirm that the smallest delay time is indeed achieved with the air-gap method, compared with that using either conventional high-density-plasma (HDP) oxide or low-dielectric-constant spin-on-glass (SOG). In addition, we have also developed fitting equations for the delay time, thus provide a handy method for predicting the RC delay time. The oscillator delay time is also found to be critically dependent on not only the size, but also the position of the air-gap. Best delay time reduction is obtained when the air-gap is positioned in extended both above and below the metal lines to effectively reduce the fringing capacitance.

Original languageEnglish
JournalMaterials Research Society Symposium - Proceedings
Volume612
DOIs
StatePublished - 1 Dec 2000
EventMaterials, Technology and Reliability for Advanced Interconnetcs and Low-K Dielectrics - San Francisco, CA, United States
Duration: 23 Apr 200027 Apr 2000

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