A compact model for multi-gate MOSFETs with two independently-biased gates is presented. The core model is verified against TCAD simulations without the use of any fitting parameters. Real device effects such as short channel effects and body doping effects are captured. The use of the model is demonstrated through two simulation examples: (1) Back-gate dynamic feedback of FinFET SRAM cells and (2) Tuning of device variations through back gate biasing.
|Number of pages||4|
|Journal||Technical Digest - International Electron Devices Meeting, IEDM|
|State||Published - 1 Dec 2007|
|Event||2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States|
Duration: 10 Dec 2007 → 12 Dec 2007