A multi-gate MOSFET compact model featuring independent-gate operation

Darsen D. Lu, Mohan V. Dunga, Chung Hsun Lin, Ali M. Niknejad, Chen-Ming Hu

Research output: Contribution to journalConference article

27 Scopus citations

Abstract

A compact model for multi-gate MOSFETs with two independently-biased gates is presented. The core model is verified against TCAD simulations without the use of any fitting parameters. Real device effects such as short channel effects and body doping effects are captured. The use of the model is demonstrated through two simulation examples: (1) Back-gate dynamic feedback of FinFET SRAM cells and (2) Tuning of device variations through back gate biasing.

Original languageEnglish
Article number4419001
Pages (from-to)565-568
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting, IEDM
DOIs
StatePublished - 1 Dec 2007
Event2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States
Duration: 10 Dec 200712 Dec 2007

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