A MOSFET electron mobility model of wide temperature range (77-400 K) for IC simulation

Kenneth Chain*, Jian Hui Huang, Jon Duster, Ping K. Ko, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

51 Scopus citations

Abstract

Based on the physics of scattering mechanisms of MOSFET inversion layer carriers at different temperatures and vertical electric fields, a new unified mobility model of wide temperature (77-400 K) and Eeff range is proposed for IC simulation. Measurement data taken in a wide range of temperatures and electric fields are compared with the simulation results of a MOSFET current model implementing this new mobility equation. Excellent agreement between the simulation and measurement data is found.

Original languageEnglish
Pages (from-to)355-358
Number of pages4
JournalSemiconductor Science and Technology
Volume12
Issue number4
DOIs
StatePublished - 1 Apr 1997

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