A monolithic CMOS MEMS accelerometer with low noise gain tunable interface in 0.18μm CMOS MEMS technology

Yi Da Lin, Jian Yuan Lin, Chun Kai Wang*, Long Sheng Fan, Kuei-Ann Wen

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

A monolithic capacitance accelerometer is fabricated in 0.18μm ASIC-compatible CMOS MEMS technology and, with the assistant of universal sensing system being developed in the proposed work. The new approach combines the Dual-Chopper amplifier and Correlated Double Sampling to alleviate 1/f noise and DC offset. The total noise equivalent acceleration is 13.49ug/√Hz under 500 Hz. The tunable sensitivity can be adjusted from 324.8 mV/fF to 17807.11mV/fF (differential mode) by the fully-differential variable gain amplifier (VGA).

Original languageEnglish
Title of host publicationIEEE SENSORS 2012 - Proceedings
DOIs
StatePublished - 1 Dec 2012
Event11th IEEE SENSORS 2012 Conference - Taipei, Taiwan
Duration: 28 Oct 201231 Oct 2012

Publication series

NameProceedings of IEEE Sensors

Conference

Conference11th IEEE SENSORS 2012 Conference
CountryTaiwan
CityTaipei
Period28/10/1231/10/12

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    Lin, Y. D., Lin, J. Y., Wang, C. K., Fan, L. S., & Wen, K-A. (2012). A monolithic CMOS MEMS accelerometer with low noise gain tunable interface in 0.18μm CMOS MEMS technology. In IEEE SENSORS 2012 - Proceedings [6411546] (Proceedings of IEEE Sensors). https://doi.org/10.1109/ICSENS.2012.6411546