A modified hicum model for GaInP/GaAs HBT devices

S. C. Tseng*, Chin-Chun Meng, W. Y. Chen, J. Y. Su

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

A compact physics-based transit-time model is established for the GaInP/GaAs HBT device. The VBIC model fails to describe the transit-time frequency versus bias (IC, VCE), especially at low- and medium-current regimes. Starting with the HICUM model, we introduce a new time constant to describe the transit-time frequency versus bias (IC, VCE) more precisely. This model has obvious advantages over the VBIC model for showing the relation of ft versus bias (IC, VCE) in the low and medium current regimes for GaInP/GaAs HBT devices.

Original languageEnglish
Pages (from-to)780-783
Number of pages4
JournalMicrowave and Optical Technology Letters
Volume48
Issue number4
DOIs
StatePublished - 1 Apr 2006

Keywords

  • GaInP/GaAs HBT
  • HICUM and VBIC
  • Minority charge
  • Transit time

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