A modified hicum model for GaInP/GaAs HBT devices

S. C. Tseng; Chin-Chun Meng; W. Y. Chen; J. Y. Su

doi:10.1002/mop.21474

A modified hicum model for GaInP/GaAs HBT devices

S. C. Tseng^*, Chin-Chun Meng, W. Y. Chen, J. Y. Su

^*Corresponding author for this work

National Chiao Tung University

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

A compact physics-based transit-time model is established for the GaInP/GaAs HBT device. The VBIC model fails to describe the transit-time frequency versus bias (I_C, V_CE), especially at low- and medium-current regimes. Starting with the HICUM model, we introduce a new time constant to describe the transit-time frequency versus bias (I_C, V_CE) more precisely. This model has obvious advantages over the VBIC model for showing the relation of f_t versus bias (I_C, V_CE) in the low and medium current regimes for GaInP/GaAs HBT devices.

Original language	English
Pages (from-to)	780-783
Number of pages	4
Journal	Microwave and Optical Technology Letters
Volume	48
Issue number	4
DOIs	https://doi.org/10.1002/mop.21474
State	Published - 1 Apr 2006

Keywords

GaInP/GaAs HBT
HICUM and VBIC
Minority charge
Transit time

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title = "A modified hicum model for GaInP/GaAs HBT devices",

abstract = "A compact physics-based transit-time model is established for the GaInP/GaAs HBT device. The VBIC model fails to describe the transit-time frequency versus bias (IC, VCE), especially at low- and medium-current regimes. Starting with the HICUM model, we introduce a new time constant to describe the transit-time frequency versus bias (IC, VCE) more precisely. This model has obvious advantages over the VBIC model for showing the relation of ft versus bias (IC, VCE) in the low and medium current regimes for GaInP/GaAs HBT devices.",

keywords = "GaInP/GaAs HBT, HICUM and VBIC, Minority charge, Transit time",

author = "Tseng, {S. C.} and Chin-Chun Meng and Chen, {W. Y.} and Su, {J. Y.}",

year = "2006",

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AU - Tseng, S. C.

AU - Meng, Chin-Chun

AU - Chen, W. Y.

AU - Su, J. Y.

PY - 2006/4/1

Y1 - 2006/4/1

N2 - A compact physics-based transit-time model is established for the GaInP/GaAs HBT device. The VBIC model fails to describe the transit-time frequency versus bias (IC, VCE), especially at low- and medium-current regimes. Starting with the HICUM model, we introduce a new time constant to describe the transit-time frequency versus bias (IC, VCE) more precisely. This model has obvious advantages over the VBIC model for showing the relation of ft versus bias (IC, VCE) in the low and medium current regimes for GaInP/GaAs HBT devices.

AB - A compact physics-based transit-time model is established for the GaInP/GaAs HBT device. The VBIC model fails to describe the transit-time frequency versus bias (IC, VCE), especially at low- and medium-current regimes. Starting with the HICUM model, we introduce a new time constant to describe the transit-time frequency versus bias (IC, VCE) more precisely. This model has obvious advantages over the VBIC model for showing the relation of ft versus bias (IC, VCE) in the low and medium current regimes for GaInP/GaAs HBT devices.

KW - GaInP/GaAs HBT

KW - HICUM and VBIC

KW - Minority charge

KW - Transit time

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JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

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