A theoretical model of npvn power transistor turn-off transients oriented toward circuit analysis is presented. It predicts the collector voltage waveforms under constant collector and reverse base currents in closed-form expressions. In particular, a storage period, a voltage-rise period and their dependence on currents and device parameters are revealed. It also provides a conceptual one-dimensional model for the physical processes of switching turn-off.
|Number of pages||6|
|Journal||PESC Record - IEEE Annual Power Electronics Specialists Conference|
|State||Published - 1 Jan 1980|
|Event||11th Annual IEEE Power Electronics Specialists Conference, PESC 1980 - Atlanta, United States|
Duration: 16 Jun 1980 → 20 Jun 1980