@inproceedings{28e5676c9280477c80efbf9509fd79c5,
title = "A millimeter-wave wideband SPDT switch with traveling-wave concept using 0.13-μm CMOS process",
abstract = " A wideband SPDT switch in standard bulk 0.13-μm CMOS process is demonstrated in this paper. In order to extend the operation frequency, the traveling-wave circuit topology is utilized. Due to the different requirements in the transmit and receive paths, the switch is designed to be asymmetric. In the receive path, the switch achieves a measured insertion loss less than 2.7 dB, a measured isolation better than 26 dB from 27 to 50 GHz. On the other hand, for the transmit path, the switch also achieves a measured insertion loss less than 4.4 dB, and an isolation better than 14 dB from 30 to 63 GHz. At 40 GHz, a measured input P 1dB of 13.8 dBm is attained. The chip size is only 0.8 × 0.5 mm 2 . The measured data agree with the simulation results well. To our knowledge, this work is the first CMOS switch in millimeter-wave frequency range.",
keywords = "CMOS, SPDT switch, Traveling wave",
author = "Yeh, {Mei Chao} and Zuo-Min Tsai and Lin, {Kun You} and Huei Wang and Su, {Chia Yi} and Chao, {Chih Ping}",
year = "2005",
month = dec,
day = "1",
doi = "10.1109/MWSYM.2005.1516518",
language = "English",
isbn = "0780388461",
series = "IEEE MTT-S International Microwave Symposium Digest",
pages = "53--56",
booktitle = "2005 IEEE MTT-S International Microwave Symposium Digest",
note = "null ; Conference date: 12-06-2005 Through 17-06-2005",
}