A method to characterize the dielectric and interfacial properties of metal-insulator-semiconductor structures by microwave measurement

Hang Ting Lue*, Tseung-Yuen Tseng, Guo Wei Huang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

25 Scopus citations

Abstract

We have developed a method to investigate the dielectric and interfacial properties of gate dielectric thin films by microwave measurement. Ba 0.5Sr 0.5TiO 3 (BST) thin films were deposited on 10 cm (normal) and 10 k cm [high-resistivity, (HR)] silicon substrates at the same time by rf magnetron sputtering. For the BST/HR-silicon, coplanar waveguides (CPW) were fabricated and measured at microwave frequencies with thru-reflect-line calibration while capacitance (C-V) measurements were carried out for BST/normal silicon. From the phase change of CPW transmission line and the maximum capacitance in C-V measurement, the dielectric constants of both the BST thin film and interface layer can be determined. Furthermore, the behaviors of insertion loss versus bias voltage were investigated. The results indicate that our method can provide useful information to study the dielectric and interfacial properties of metal-insulator-semiconductor structures.

Original languageEnglish
Pages (from-to)5275-5282
Number of pages8
JournalJournal of Applied Physics
Volume91
Issue number8
DOIs
StatePublished - 15 Apr 2002

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