A Metal–Insulator Transition of the Buried MnO 2 Monolayer in Complex Oxide Heterostructure

Heng Jui Liu, Jheng Cyuan Lin, Yue Wen Fang, Jing Ching Wang, Bo Chao Huang, Xiang Gao, Rong Huang, Philip R. Dean, Peter D. Hatton, Yi Ying Chin, Hong Ji Lin, Chien Te Chen, Yuichi Ikuhara, Ya Ping Chiu, Chia Seng Chang, Chun Gang Duan, Qing He*, Ying-hao Chu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

13 Scopus citations


Researchers conducted a study to create a single metal-oxide plane as a 2D monolayer through interface engineering. This 2D oxide monolayer could be obtained at the heterostructure similar to the case of a single-unit-cell manganite ultrathin film sandwiched between two neighboring complex oxides. This study delivered a generic approach to study the dimensional confinement of strongly correlated electron systems and provides a direction to design new electronic devices. The MnO 2 monolayer was chosen as a model system, since the mixture of Mn 4+ and Mn 3+ cations in these oxide planes dominated the novel physical phenomena of colossal magnetoresistance manganites.

Original languageEnglish
Pages (from-to)9142-9151
Number of pages10
JournalAdvanced Materials
Issue number41
StatePublished - 1 Jan 2016


  • 2D materials
  • complex oxide heterostructures
  • manganites
  • MnO monolayer

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